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QS6K21FRA

Rohm

Nch 45V 1A Power MOSFET

QS6K21FRA Nch 45V 1A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 420mW 1A 1.25W lFeatures 1) Low on - resistance. 2) ...


Rohm

QS6K21FRA

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QS6K21FRA Nch 45V 1A Power MOSFET VDSS RDS(on) (Max.) ID PD 45V 420mW 1A 1.25W lFeatures 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant lOutline TSMT6 Datasheet AEC-Q101 Qualified (6) (5) (4) (1) (2) (3) lInner circuit (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging lApplication DC/DC converters Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg 45 1.0 2.0 12 1.25 0.9 0.6 150 -55 to +150 Taping 180 8 3,000 TR K21 Unit V A A V W / total W / element W / total °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.10 - Rev.B QS6K21FRA lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Symbol Conditions Min. Values Typ. Max. Drain - Source breakdown volt...




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