Document
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM12N65B
VDS (V) 650
PRODUCT SUMMARY rDS(on) (mΩ)
800 @ VGS = 10V 850 @ VGS = 6V
ID (A) 12a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TC=25°C TC=25°C
VGS ID IDM IS
±20 12 50 12
Power Dissipation
TC=25°C
PD
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 1
Units °C/W
Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM12N65B_1A
Analog Power
AM12N65B
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 10 V
30
A
Drain-Source On-Resistance a
rDS(on)
VGS = 10 V, ID = 2 A VGS = 6 V, ID = 1.6 A
800 mΩ 850
Forward Transconductance a
gfs
VDS = 15 V, ID = 2 A
58 S
Diode Forward Voltage a
VSD IS = 6 A, VGS = 0 V
0.81 V
Dynamic b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd td(on)
tr td(off)
tf Ciss Coss Crss
VDS = 100 V, VGS = 6 V, ID = 2 A
VDS = 100 V, RL = 50 Ω, ID = 2 A,
VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 Mhz
23 11 11 24 10 60 11 2691 165 33
nC ns pF
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey.