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AM12N65B Dataheets PDF



Part Number AM12N65B
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM12N65B DatasheetAM12N65B Datasheet (PDF)

Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM12N65B VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ VGS = 10V 850 @ VGS = 6V ID (A) 12a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Cur.

  AM12N65B   AM12N65B



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Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM12N65B VDS (V) 650 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ VGS = 10V 850 @ VGS = 6V ID (A) 12a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C TC=25°C VGS ID IDM IS ±20 12 50 12 Power Dissipation TC=25°C PD 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM12N65B_1A Analog Power AM12N65B Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 30 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 2 A VGS = 6 V, ID = 1.6 A 800 mΩ 850 Forward Transconductance a gfs VDS = 15 V, ID = 2 A 58 S Diode Forward Voltage a VSD IS = 6 A, VGS = 0 V 0.81 V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 100 V, VGS = 6 V, ID = 2 A VDS = 100 V, RL = 50 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz 23 11 11 24 10 60 11 2691 165 33 nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey.


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