AM14N65P

Analog Power N-Channel 650-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Power Supplies Motor Drives Consumer Electronics AM14N65P PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 650 650 @ VGS = 10V ID (A) 14a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±30 14 60 14 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM14N65P_1A Analog Power AM14N65P Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±30 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 55°C 1 uA 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-Resistance a rDS(on) VGS...