AM90P10-60B

Analog Power P-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Inrush Limiter / Hotswap Circuits Automotive Systems Motor Control AM90P10-60B VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 66 @ VGS = -10V 80 @ VGS = -5.5V ID (A) -55a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 -55 -220 -55 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 11 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM90P10-60B_1B Analog Power AM90P10-60B Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -80 V, VGS = 0 V VDS = -80 V, VGS = 0 V, TJ = 55°C -1 uA -10 On-State Drain Current a ID(on) VDS = -5 V, VGS = -10 V -75 A Drain-Source...