AM90N10-14PCFM

Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-220CFM saves board space Fast switching speed High performance trench technology AM90N10-14PCFM PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 100 16 @ VGS = 10V 19 @ VGS = 5.5V TO-220CFM ID (A) 87a D1 G1 S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TC=25oC ID IDM IS TC=25oC PD TJ, Tstg 100 ±20 87 240 90 300 -55 to 175 V A A W oC THERMALRESISTANCERATINGS Parameter Symbol MaximumJunction-to-Ambienta RθJA MaximumJunction-to-Case RθJC Notes a. Package Limited b. Pulse width limited by maximum junction temperature Maximum Units 62.5 oC/W 3.2 oC/W PRELIMINARY 1 Publication Order Number: DS-AM90N10-14PCFM_A Analog Power AM90N10-14PCFM SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parame te r Symbol Test Conditions Static Gate-Threshold Voltage...