AM90N06-09B

Analog Power N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AM90N06-09B VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 10.5 @ VGS = 4.5V ID (A) 90a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 90 260 Continuous Source Current (Diode Conduction) TC=25°C IS 110 Power Dissipation TC=25°C PD 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM90N06-09B_1A Analog Power AM90N06-09B Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD ...