AM90N04-02B

Analog Power N-Channel 40-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Battery Operated Power Tools Automotive Systems Industrial DC/DC Conversion Circuits AM90N04-02B VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 2.3 @ VGS = 10V 3 @ VGS = 5.5V ID(A) 120a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C TC=25°C VGS ID IDM IS ±20 120 360 90 Power Dissipation TC=25°C PD 234 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 43 0.64 Units °C/W Notes a. Package limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board © Preliminary 1 Publication Order Number: DS_AM90N04-02B_1A Analog Power AM90N04-02B Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capa...