N-Channel MOSFET
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management such as computers, printers, and power supplies.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe TO-263 saves board space
Fast switching speed High performance trench technology
AM90N03-06B
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 6 @ VGS = 10V 7.2 @ VGS = 4.5V
ID (A) 90a
D1
G1
S1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS VGS TC=25oC ID IDM IS TC=25oC PD
TJ, Tstg
30 ±20 90 240 90 300 -55 to 175
V
A
A W oC
THERMALRESISTANCERATINGS
Parameter
Symbol
MaximumJunction-to-Ambienta
RθJA
MaximumJunction-to-Case
RθJC
Notes a. Package Limited b. Pulse width limited by maximum junction temperature
Maximum Units
62.5 oC/W 0.5 oC/W
PRELIMINARY
1 Publication Order Number: DS-AM90N04-03_A
Analog Power
AM90N03-06B
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol
Test Conditions
Static
Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Curre...
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