AM8N60P

Analog Power N-Channel 600-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Off-line Power Supplies Electronic Ballasts High Power LED Lighting AM8N60P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 1 @ VGS = 10V ID(A) 8a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current a TC=25°C ID IDM 8 50 Continuous Source Current (Diode Conduction) TC=25°C IS 8 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM8N60P_1A Analog Power AM8N60P Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 480 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 15 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 4 A 1Ω Forward Transconductance a ...