N-Channel MOSFET
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: Power Supplies Motor Drives Consumer Electronics
AM4N65P
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
650 2.6 @ VGS = 10V
ID (A) 4a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 650
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 4 16 4
300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient c Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 0.5
Units °C/W
Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board.
© Preliminary
1 Publication Order Number: DS_AM4N65P_1A
Analog Power
AM4N65P
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
2
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 520 V, VGS = 0 V VDS = 520 V, VGS = 0 V, TJ = 55°C
1 uA 10
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 10 V
5
A
Drain-Source On-Resistance a
rDS(on)
VGS = 10 V,...
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