AM10N20-750B

Analog Power N-Channel 200-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits Inrush Limiter and Hot Swap Circuits 48V-Input DC/DC Conversion Circuits AM10N20-750B PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 200 750 @ VGS = 10V ID (A) 10a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 10 40 10 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient C Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. © Preliminary 1 Publication Order Number: DS_AM10N20-750B_1A Analog Power AM10N20-750B Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 12.5 A Drain-Source On...