AM10N20-400D

Analog Power N-Channel 200-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters AM10N20-400D PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 200 400 @ VGS = 10V ID(A) 10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current b TC=25°C ID IDM 10 40 Continuous Source Current (Diode Conduction) IS 10 Power Dissipation TC=25°C PD 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM10N20-400D_1B Analog Power AM10N20-400D Typical Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C 1 uA 10 On-State ...