AM10N40-1800D

Analog Power N-Channel 400-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Power Supplies Motor Drives Consumer Electronics AM10N40-1800D PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 400 1800 @ VGS = 10V ID (A) 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 400 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C VGS ID IDM IS PD ±20 4 16 4 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM10N40-1800D_1A Analog Power AM10N40-1800D Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 320 V, VGS = 0 V VDS = 320 V, VGS = 0 V, TJ = 55°C 1 uA 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 6 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 2 A 1800 mΩ Forward Transcond...