AM20N10-250D

Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM20N10-250D PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 100 280 @VGS= 10V 355 @VGS= 4.5V ID (A) 11 10 ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TC=25oC ID IDM 100 V ±20 11 A 36 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Junction and Storage Temperature Range TC=25oC PD 50 W TJ, Tstg -55 to 175 oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM20N10-250_C Analog Power AM20N10-250D SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate...