AM40N10-30D

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters AM40N10-30D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V ID(A) 26 24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current b TC=25°C ID IDM 26 50 Continuous Source Current (Diode Conduction) IS 50 Power Dissipation TC=25°C PD 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 50 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM40N10-30D Analog Power AM40N10-30D Typical Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 3.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 34 A Drain-Source On...