N-Channel MOSFET
Analog Power
N-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proce...
Description
Analog Power
N-Channel 200-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe DPAK saves board space
Fast switching speed High performance trench technology
AM20N20-125D
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
200 260 @ VGS = 10V 300 @ VGS = 5.5V
ID (A) 12 11
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS VGS TC=25oC ID IDM IS TC=25oC PD
TJ, Tstg
200 ±20 15 36 30 50 -55 to 175
V
A
A W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number: DS-AM20N20-125_A
Analog Power
AM20N20-125D
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static...
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