C3198

ST 2SC3198 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 150 50 500 125 -55 to +125 Unit V V V mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 2SC3198 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=2mA Current Gain Group O Y G L at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE hFE VCE(sat) VBE(sat) ICBO IEBO fT COB Rbb’ NF Min. 70 120 200 350 25 80 - - G S P FORM A IS AVAILABLE Typ. 100 0.1 2 50 1 Max. 140 240 400...