KTC4375

Epitaxial Planar NPN Transistor FEATURES z PC=1W(Mounted on ceramic substrate). z Small flat package. Pb Lead-free z Complementary: KTA1663. Production specification KTC4375 ORDERING INFORMATION Type No. Marking KTC4375 GO/GY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current 30 30 5 1.5 0.3 PC Collector Power Dissipation PC* Tj,Tstg Junction and Storage Temperature PC*:KTC4375mounted on ceramic substrate(250mm2x0.8t) 500 1 -55 to +150 Units V V V A A mW W ℃ E034 Rev.A www.gmicroelec.com 1 Production specification Epitaxial Planar NPN Transistor KTC4375 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 30 30 5 V V V Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage ICBO IEBO hFE VCE(sat) VBE VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=500mA IC=1.5A, IB= 0.03A VCE=2V, IB= 500mA 100 100 nA 100 nA 320 2.0 V 1.0 V Transition frequency fT VCE=2V, IC= 500mA 120 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF CLASSIFICATION OF hFE(1) Rank O Range 10...