Epitaxial Planar NPN Transistor
FEATURES
z PC=1W(Mounted on ceramic substrate). z Small flat package.
Pb
Lead-free
z ...
Epitaxial Planar
NPN Transistor
FEATURES
z PC=1W(Mounted on ceramic substrate). z Small flat package.
Pb
Lead-free
z Complementary: KTA1663.
Production specification
KTC4375
ORDERING INFORMATION
Type No.
Marking
KTC4375
GO/GY
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO VEBO IC IB
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base current
30 30 5 1.5 0.3
PC Collector Power Dissipation
PC*
Tj,Tstg
Junction and Storage Temperature
PC*:KTC4375mounted on ceramic substrate(250mm2x0.8t)
500 1 -55 to +150
Units V V V A A mW W ℃
E034 Rev.A
www.gmicroelec.com 1
Production specification
Epitaxial Planar
NPN Transistor
KTC4375
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CBO V(BR)CEO V(BR)EBO
IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0
30 30 5
V V V
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage
ICBO IEBO hFE VCE(sat) VBE
VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V,IC=500mA IC=1.5A, IB= 0.03A VCE=2V, IB= 500mA
100
100 nA 100 nA 320 2.0 V 1.0 V
Transition frequency
fT VCE=2V, IC= 500mA
120 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
40 pF
CLASSIFICATION OF hFE(1)
Rank
O
Range
10...