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1N4749A Dataheets PDF



Part Number 1N4749A
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet 1N4749A Datasheet1N4749A Datasheet (PDF)

1N4728A to 1N4749A Voltage regulator diodes Rev. 02 — 30 October 2009 Product data sheet 1. Product profile 1.1 General description Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V. 1.2 Features I Total power dissipation: max. ≤ 1000 mW I Working voltage range: nom. 3.3 V to 24 V I Tolerance series: ±5 % I Small hermetically sealed glass package 1.3 Applications I Low voltag.

  1N4749A   1N4749A


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1N4728A to 1N4749A Voltage regulator diodes Rev. 02 — 30 October 2009 Product data sheet 1. Product profile 1.1 General description Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V. 1.2 Features I Total power dissipation: max. ≤ 1000 mW I Working voltage range: nom. 3.3 V to 24 V I Tolerance series: ±5 % I Small hermetically sealed glass package 1.3 Applications I Low voltage stabilizers 1.4 Quick reference data Table 1. Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Conditions IF = 200 mA Min Typ Max Unit - - 1.2 V - - 1000 mW 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] The marking band indicates the cathode. Simplified outline [1] ka Graphic symbol 12 006aaa152 NXP Semiconductors 1N4728A to 1N4749A Voltage regulator diodes 3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description 1N4728A to 1N4749A[1] - hermetically sealed glass package; axial leaded; 2 leads [1] The series consists of 22 types with nominal working voltages from 3.3 V to 24 V. Version SOD66 Table 4. Marking codes Type number 1N4728A to 1N4749A Marking code The diodes are type branded. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min IF forward current IZ working current - IZSM non-repetitive peak reverse current Ptot total power dissipation Tamb = 50 °C Tj junction temperature Tstg storage temperature - −65 −65 Max 500 see Table 8 see Table 8 1000 +200 +200 Unit mA mW °C °C 1N4728A_SER_2 Product data sheet Rev. 02 — 30 October 2009 © NXP B.V. 2009. All rights reserved. 2 of 10 NXP Semiconductors 1N4728A to 1N4749A Voltage regulator diodes 6. Thermal characteristics Table 6. Symbol Rth(j-t) Thermal characteristics Parameter thermal resistance from junction to tie-point Conditions lead length 4 mm Min Typ Max Unit - - 110 K/W 103 Rth(j-t) (K/W) 102 10 1 10−1 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0 1 10 006aab843 102 103 104 tp (ms) 105 Fig 1. Thermal resistance from junction to tie-point as a function of pulse duration; lead length 4 mm 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter VF forward voltage Conditions IF = 200 mA Min Typ Max Unit - - 1.2 V 1N4728A_SER_2 Product data sheet Rev. 02 — 30 October 2009 © NXP B.V. 2009. All rights reserved. 3 of 10 NXP Semiconductors 1N4728A to 1N4749A Voltage regulator diodes Table 8. Characteristics per type Tj = 25 °C unless otherwise specified. Type number Working voltage VZ (V)[1] at Itest Test current Itest (mA) Differential resistance rdif (Ω) at Itest at IZ Nom Max Max 1N4728A 3.3 76 10 400 1N4729A 3.6 69 10 400 1N4730A 3.9 64 9 400 1N4731A 4.3 58 9 400 1N4732A 4.7 53 8 500 1N4733A 5.1 49 7 550 1N4734A 5.6 45 5 600 1N4735A 6.2 41 2 700 1N4736A 6.8 37 3.5 700 1N4737A 7.5 34 4 700 1N4738A 8.2 31 4.5 700 1N4739A 9.1 28 5 700 1N4740A 10 25 7 700 1N4741A 11 23 8 700 1N4742A 12 21 9 700 1N4743A 13 19 10 700 1N4744A 15 17 14 700 1N4745A 16 15.5 16 700 1N4746A 18 14 20 750 1N4747A 20 12.5 22 750 1N4748A 22 11.5 23 750 1N4749A 24 10.5 25 750 Reverse current IR (µA) Working current IZ (mA) IZ (mA) Max 1 100 VR (V) Max 1 276 1 100 1 252 1 50 1 234 1 10 1 217 1 10 1 193 1 10 1 178 1 10 2 162 1 10 3 146 1 10 4 133 0.5 10 5 121 0.5 10 6 110 0.5 10 7 100 0.25 10 7.6 91 0.25 5 8.4 83 0.25 5 9.1 76 0.25 5 9.9 69 0.25 5 11.4 61 0.25 5 12.2 57 0.25 5 13.7 50 0.25 5 15.2 45 0.25 5 16.7 41 0.25 5 18.2 38 [1] VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. [2] Half square wave or equivalent sine wave pulse 1/120 second duration superimposed on Itest. Non-repetitive peak reverse current IZSM (mA)[2] Max 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 1N4728A_SER_2 Product data sheet Rev. 02 — 30 October 2009 © NXP B.V. 2009. All rights reserved. 4 of 10 NXP Semiconductors 1N4728A to 1N4749A Voltage regulator diodes 300 IF (mA) 200 100 mbg925 (1) (2) 0 0 0.5 VF (V) 1.0 (1) Tj = 200 °C (2) Tj = 25 °C Fig 2. Forward current as a function of forward voltage; typical values 1N4728A_SER_2 Product data sheet Rev. 02 — 30 October 2009 © NXP B.V. 2009. All rights reserved. 5 of 10 NXP Semiconductors 8. Package outline Hermetically sealed glass package; axial leaded; 2 leads 1N4728A to 1N4749A Voltage regulator diodes SOD66 (1) k D L G1 Dimensions Unit b D G1 L max 0.81 2.6 mm nom min 4.8 25.4 Note 1. The marking band indicates the cathode. Outline version IEC SOD66 References JEDEC JEITA DO-41 Fig 3. Package outline SOD66 (DO-41) a b L 0 2 4 mm sc.


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