N-Channel MOSFET
Main Product Characteristics
2N7002KB
60V N-Channel MOSFET
VDSS
60V
RDS(on) 2Ω(max.)
ID 0.3A Features and Benefits
...
Description
Main Product Characteristics
2N7002KB
60V N-Channel MOSFET
VDSS
60V
RDS(on) 2Ω(max.)
ID 0.3A Features and Benefits
SOT-23
Marking and Pin Assignment
Schematic Diagram
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating:1000V HBM 150℃ operating temperature Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Thermal Resistance
Max. 0.3 1.2 0.63 60 ± 20 -55 to +150
Symbol RθJA
Characteristics Junction-to-ambient (t ≤ 10s) ④
Typ. —
Max. 200
Units A W V V °C
Units ℃/W
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Rev.1.0
2N7002KB
60V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance
60 — —
VGS(th) IDSS
IGSS
Gate threshold voltage...
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