Document
Analog Power
P-Channel 80-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM110P08-11B
VDS (V) -80
PRODUCT SUMMARY rDS(on) (mΩ)
11.2 @ VGS = -10V 14.5 @ VGS = -5.5V
ID(A) -110a
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -80
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 -110 -390 -110 300
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 62.5 1
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM110P08-11B_1A
Analog Power
AM110P08-11B
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol
VGS(th) IGSS
IDSS
ID(on)
rDS(on)
gfs VSD
Qg Qgs Qgd td(on)
tr td(off)
tf Ciss Coss Crss
Test Conditions Static VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -64 V, VGS = 0 V VDS = -64 V, VGS = 0 V, TJ = 55°C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -45 A VGS = -5.5 V, ID = -44 A VDS = -15 V, ID = -20 A IS = -55 A, VGS = 0 V Dynamic
VDS = -40 V, VGS = -5.5 V, ID = -20 A
VDS = -40 V, RL = 2 Ω, ID = -20 A,
VGEN = -10 V, RGEN = 6 Ω
VDS = -15 V, VGS = 0 V, f = 1 MHz
Min Typ Max
1 -120
30 -0.92
±100 -1 -25
11.2 14.5
168 47 78 25 73 351 144 16071 966 858
Unit V nA uA A mΩ S V
nC
ns
pF
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2 Publication Order Number: DS_AM110P08-11B_1A
Analog Power
AM110P08-11B
Typical Electrical Characteristics
RDS(on) - On-Resistance(Ω)
0.06
0.05 0.04
3.5V
0.03 0.02 0.01
4V 4.5V,5V,5.5V,6V,8V,10V
0 0 5 10 15 20 25 30
ID-Drain Current (A) 1. On-Resistance vs. Drain Current
ID - Drain Current (A)
50 TJ = 25°C
40
30
20
10
0 0246 VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics
RDS(on) - On-Resistance(Ω)
0.1 100
TJ = 25°C
TJ = 25°C
ID = -20A
0.08
10
IS - Source Current (A)
0.06 1
0.04
0.1 0.02
0 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage
0.01 0.2 0.4 0.6 0.8 1 1.2
VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage
ID - Drain Current (A)
30 10V,8V,6V,5.5V,5V,4.5V
25
20 4V
15 10 3.5V
5
0 0 0.2 0.4 0.6 0.8 VDS - Drain-to-Source Voltage (V) 5. Output Characteristics
© Preliminary
3
Capacitance (pf)
25000 20000 15000 10000
5000 0 0
F = 1MHz Ciss
Coss Crss
5
10 15
VDS-Drain-to-Source Voltage (V) 6. Capacitance
20
Publication Order N.