AM180N10-04M5P

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives AM180N10-04m5P VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 6.5 @ VGS = 10V 8.5 @ VGS = 5.5V ID (A) 180a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C TC=25°C VGS ID IDM IS ±20 180 700 180 Power Dissipation Single Pulse Avalanche Energy d TC=25°C PD EAS 300 500 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W mJ °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 0.5 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. d. Tj=25 °C, L=0.51mH, ID=45A, VDD=50V © Preliminary 1 Publication Order Number: DS_AM180N10-04m5P_1A Analog Power AM180N10-04m5P Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Tim...