AM2306NE

Analog Power AM2306NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 58 @ VGS = 10V 82 @ VGS = 4.5V SOT-23 Top View ID (A) 3.5 3.0 D Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space G High power and current handling capability Low side high current DC-DC Converter S applications ESD Protected G D S N-Channel MOSFET 2000V ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID IDM IS TA=25oC TA=70oC PD TJ, Tstg 30 ±20 3.5 2.8 16 1.25 1.3 0.8 -55 to 150 V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady-State Symbol RθJA Maximum 100 166 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum ...