AM6968NH

Analog Power AM6968NH Dual N-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 24 @ VGS = 4.5V 32 @ VGS = 2.5V ID (A) 6.5 5.6 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.5 5.3 30 1.8 Power Dissipation a TA=25°C TA=70°C PD 1.5 1 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 83 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM6968NH_1A Analog Power AM6968NH Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 0.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C 1 uA 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 10 A Drain-Source On-Resistance a...