AM6520C

Analog Power AM6520C P & N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. VDS (V) 20 -20 rDS(on) m(Ω) 47 @ VGS = 4.5V 66 @ VGS = 2.5V 95 @ VGS = 1.8V 47 @ VGS = -4.5V 72 @ VGS = -2.5V 95 @ VGS = -1.8V Low rDS(on) Provides Higher Efficiency and Extends Battery Life TSSOP-8 Top View D1 Miniature TSSOP-8 Surface Mount Package D1 1 Saves Board Space S1 2 S1 3 High power and current handling capability G1 4 Low side high current DC-DC Converter 8 D2 7 S2 G1 6 S2 5 G2 S1 N-Channel MOSFET applications ID (A) 4.7 3.9 3.3 -4.7 -3.8 -3.3 S2 G2 D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol N-Channel P-Channel Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 20 8 -20 -8 V 4.7 -4.7 3.8 -3.8 A ±50 ±50 Continuous Source Current (Diode Conduction)a IS 2.3 -2.3 A Power Dissipationa TA=25oC TA=70oC PD Operating Junction and Storage Temperature Range TJ, Tstg 2.1 1.3 -55 to 150 2.1 1.3 -55 to 150 W oC THERMAL RESIST...