Dual N-Channel MOSFET
Analog Power
AM4970N
Dual N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal im...
Description
Analog Power
AM4970N
Dual N-Channel 200-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits
VDS (V) 200
PRODUCT SUMMARY rDS(on) (mΩ)
300 @ VGS = 10V 340 @ VGS = 4.5V
ID (A) 2.2 2.1
SO-8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
2.2 1.7 30 2.9
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
62.5 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM4970N_1A
Analog Power
AM4970N
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
±10 uA
Zero Gate Voltage Drain Current
IDSS
VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 10 V
3.5
A
Dra...
Similar Datasheet