AM2313P

Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control small signal switch, power management in portable and battery-powered products and most low current high side switch. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Fast Switch Low Gate Charge High Saturation Current Miniature SOT-23 Surface Mount Package Saves Board Space PRODUCT SUMMARY VDS (V) rDS(on) (Ω) -60 10 @ VGS = -10 V 20 @ VGS = -4.5V G S ID (A) -0.2 -0.12 D ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -60 ±20 ±0.12 ±0.09 ±1 V A Continuous Source Current (Diode Conduction)a IS 0.24 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 0.36 0.29 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature July, 2002 - Rev. A PRELIMINARY 1 Symbol RT HJA Maximum Units 350 400 oC/W Publication Order Number: DS-AM2313_B Analog Power AM2313P SPECIFICATIONS (TA =...