AM3949P

Analog Power P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life G1 Low thermal impedance copper leadframe TSOP-6 saves board space S2 G2 Fast switching speed High performance trench technology AM3949P PRODUCTSUMMARY VDS (V) rDS(on) (Ω) -40 0.185 @VGS= -10V 0.240 @VGS= -4.5V ID (A) -2.5 -1.9 TSOP-6 Top View 16 25 34 D1 S1 D2 S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -40 ±20 V -2.5 -1.9 A -10 Continuous Source Current (Diode Conduction)a IS ±1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.15 0.7 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RthJA Typ 93 130 Max 110 150 oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Or...