AM2329P

Analog Power AM2329P P-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Low Gate Charge Fast Switch Miniature SOT-23 Surface Mount Package Saves Board Space PRODUCT SUMMARY VDS (V) rDS(on) (Ω) -30 0.112 @ VGS = 10 V 0.172 @ VGS = 4.5V G S ID (A) 2.5 2.0 D ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -30 ±20 V 2.5 1.7 A ±12 Continuous Source Current (Diode Conduction)a IS 1.25 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.3 0.8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RT HJA Maximum Units 100 166 oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature April, 2004 - Rev. A PRELIMINARY 1 Publication Order Number: DS-AM2329_B Analog Power AM2329P SPECIFICATIONS (TA = 25oC UNLESS OTHERW...