AM2321PE

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ESD Protected AM2321PE PRODUCT SUMMARY VDS (V) rDS(on) (OHM) -20 0.079 @ VGS = -4.5V 0.110 @ VGS = -2.5V ID (A) -4.1 -3.2 G S D ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -20 V ±8 -4.1 -3.3 A -10 Continuous Source Current (Diode Conduction)a IS ±0.46 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD TJ, Tstg 1.25 0.8 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 150 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM2321PE_A Analog Power AM2321PE SPECIFICATIONS (TA = 25oC UNLESS ...