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AM7542C

Analog Power

N & P-Channel MOSFET

Analog Power AM7542C N & P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal imped...


Analog Power

AM7542C

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Description
Analog Power AM7542C N & P-Channel 40-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion Power Routing Motor Drives VDS (V) 40 -40 PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 46 @ VGS = 4.5V 39 @ VGS = -10V 55 @ VGS = -4.5V ID (A) 6.9 6.1 -6.6 -5.6 DFN5X6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.9 -6.6 5.5 -5.3 25 -25 3.2 -3 Power Dissipation a TA=25°C TA=70°C PD 2.5 1.6 2.5 1.6 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 50 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7542C_1A Analog Power AM7542C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ...




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