AM7560C

Analog Power AM7560C N & P-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Motor Drives VDS (V) 60 -60 PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 26 @ VGS = 4.5V 42 @ VGS = 10V 52 @ VGS = 4.5V ID (A) 33c 30c 24c 21c DFN5X6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit Drain-Source Voltage VDS 60 -60 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation TA=25°C TA=70°C TC=25°C TC=70°C TA=25°C TA=70°C TC=25°C VGS ID IDM IS PD ±20 ±20 8.7a 6.3a 7.0a -5.0a 33c 24c 26c 19c 35 -25 3.3 -3.1 2.5a 2.5a 1.6a 1.6a 36 36 TC=70°C 23 23 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Steady State Symbol RθJA RθJC Maximum 50 70 3.5 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board b. Pulse width limited by maximum junction temperature c. Package limited © Preliminary 1 Publication Order Number: DS_AM7560C_1A Analog Power AM7560C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode...