AMR930N

Analog Power AMR930N Asymmetric Dual N-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion VDS (V) Q1 30 Q2 30 PRODUCT SUMMARY rDS(on) (mΩ) 9 @ VGS = 10V 15 @ VGS = 4.5V 3.5 @ VGS = 10V 5.8 @ VGS = 4.5V DFN5X6-8L ID (A) 14 11 22 17 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Q1 Limit Q2 Limit Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID 14 11 20 16 IDM 50 50 IS 3.3 3.4 Power Dissipation a TA=25°C TA=70°C PD 2.5 1.6 2.5 1.6 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 50 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Preliminary 1 Publication Order Number: DS_AMR930N_1A Analog Power AMR930N Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Ca...