AMD534CE

Analog Power AMD534CE P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 45 @VGS = 4.5V 35 @VGS =10V -30 33 @VGS =-4.5V 23 @VGS = -10V ID (A) 29 36 -32 39 Low rDS(on) provides higher efficiency and extends battery life D1 S 2 Low thermal impedance copper leadframe DPAK saves board space G 1 G 2 Fast switching speed High performance trench technology S1 G1 D S2 G2 S 1 N-Channel MOSFET D2 P-Channel MOSFET ESD Protected 2000V ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED) Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA=25oC TA=70oC ID Pulsed Drain Currentb IDM Continuous Source Current (Diode Conduction)a IS Power Dissipationa TA=25oC PD Operating Junction and Storage Temperature Range TJ, Tstg 30 -30 ±20 ±20 36 -39 30 -26 40 -40 30 -30 50 50 -55 to 175 V A A W oC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RθJA Maximum Junction-to-Case RθJC Maximum 50 3.0 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junct...