N & P-Channel MOSFET
Analog Power
AMD532C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell densit...
Description
Analog Power
AMD532C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 95 @ VGS = 2.5V 59 @ VGS = 4.5V
-26.5
178 @ VGS = -2.5V 118 @ VGS = -4.5V
ID (A) 20 24 -14 -17
Low rDS(on) provides higher efficiency and extends battery life
D S2
Low thermal impedance copper leadframe DPAK saves board space
Fast switching speed
G1
G2
High performance trench technology
S1
N-Channel MOSFET
S1 G1 D S2 G1
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb
VDS VGS TA=25oC ID IDM
30 -26.5 ±12 ±12 24 -17 40 -40
Continuous Source Current (Diode Conduction)a
IS
30 -30
Power Dissipationa
TA=25oC PD
50 50
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
Units V
A
A W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
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