AMCC530C

Analog Power AMCC530C N & P-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion Motor Drives VDS (V) 30 -30 PRODUCT SUMMARY rDS(on) (mΩ) 50 @ VGS = 10V 83 @ VGS = 4.5V 72 @ VGS = -10V 105 @ VGS = -4.5V ID (A) 5.8 4.5 -4.9 -4.0 DFN3x3-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 5.8 -4.9 4.2 -3.5 30 -30 3.2 -2.8 Power Dissipation a TA=25°C TA=70°C PD 2.5 1.3 2.5 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol RθJA Maximum 83 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AMCC530C_1A Analog Power AMCC530C Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 uA (N-ch...