P-Channel MOSFET
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench proces...
Description
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe DFN3x3-8PP saves board space
Fast switching speed High performance trench technology
AMCC431P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 60 @ VGS = -10V 90 @ VGS = -4.5V
ID (A) -5.9 -4.8
DFN3x3 Top View
S
S1 S2
8D 7 DG
S3
6D
G4
5D
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta
Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC TA=70oC
ID
-30 ±20 -5.9 -4.8
IDM ±50
IS
TA=25oC TA=70oC
PD
-2.1 3.1 2.0
TJ, Tstg -55 to 150
V
A A W oC
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambienta
t <=10 sec Steady State
Symbol RθJA
Maximum Units 35 oC/W 81 oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number: DS-AMCC431_A
Analog Power
AMCC...
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