AM7931P

Analog Power AM7931P Dual P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, communication equipments. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -30 13 @ VGS = 10V 18 @ VGS = 4.5V ID (A) 29 25 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8PP saves board space Fast switching speed High performance trench technology ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Paramete r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -30 V 20 29 24 A ±50 Continuous Source Current (Diode Conduction)a IS 13 A Power Dissipationa TA=25oC TA=70oC PD Operating Junction and Storage Temperature Range TJ, Tstg 16 10 -55 to 150 W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RθJA RθJC Maximum 35 8 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM7931_A Analog Power AM7931P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Ga...