IRG4CC20FB

IRG4CC20FB IGBT Die in Wafer Form PD- 91831A IRG4CC20FB C G E 600 V Size 2 Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.6V Max. 600V Min. VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.0V Min., 6.0V Max. 250µA Max. IGES Gate-to-Emitter Leakage Current ± 1.1µA Max. Test Conditions IC = 3.25A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-NiV-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) 0.107" x 0.134" 150mm, with std. < 100 > flat .015" + / -.003" 01-5228 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4BC20F Die Outline nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C www.irf.com 1 09/28/07 ...