RTH35003-20D

GaN Doherty Hybrid Amplifier RTH35003-20D Product Features GaN on SiC Chip on Board Surface Mount Hybrid Type 2-Stage Doherty Amplifier High Efficiency No Matching circuit needed Applications RF Sub-Systems Base Station RRH 4G/ LTE system Small cell Description Package Type : SP-1E Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH35003-20D amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. Electrical Specifications @ Vds=30V, Ta=25℃ PARAMETER Frequency Range Power Gain Gain Flatness Input Return Loss Pout @ Average UNIT MHz dB dBm MIN 3520 21 -1.5 - TYP 3540 24 -14 35.1 MAX 3560 +1.5 -9 - Pout @ Saturation dBm 42.6 43.5 - ACLR @ BW 20MHz 2FA LTE (PAPR 7.5dB) dBc - -29 -25 -53 - Doherty Efficiency Total Efficiency % 35 46 38 - Drive Amp. Idq - 40 - Carrier Amp. Idq mA - 110 - Peaking Amp. Idq -0- -4.9 -2.8 -2.0 -4.9 -2.8 -2.0 Supply Voltage ...