SI7866DP

N-Channel 20-V (D-S) MOSFET Si7866DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0025 @ VGS = 10 V 0.00375 @ VGS = 4.5 V ID (A) 29 25 PowerPAKr SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7866DP-T1 FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and Rg) Optimized D 100% Rg Tested APPLICATIONS D Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops D Low Output Voltage Synchronous Rectifier D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 "20 29 18 25 14 60 4.5 1.6 5.4 1.9 3.4 1.2 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71848 S-31727—Rev. C, 18-Aug-03 t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W www.vishay.com 1 Si7866DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Volta...