SSF3612

SSF3612 30V N-Channel MOSFET DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3612 SSF3612 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit 30 ±20 11.6 9 50 3.1 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit 30 V www.goodark.com Page 1 of 6 Rev.3.1 SSF3612 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source O...