SSF3617

SSF3617 30V P-Channel MOSFET DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V ● High Power and current handling capability ● Lead free product ● Surface Mount Package D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3617 SSF3617 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit -30 ±25 -10 -8 -80 3.1 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 75 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V Min Typ Max Unit -30 V -1 μA www.goodark.com Page 1 of 4 Rev.1.0 SSF3617 30V P-Channel MOSFET Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Ga...