SSF3620

SSF3620 30V Dual N-Channel MOSFET DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =7A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3620 SSF3620 SOP-8 Ø330mm SOP-8 Top View Tape Width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) VGS ID（25℃） ID（70℃） IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range PD TJ,TSTG Limit 30 ±20 7 5.8 25 2 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=30V,VGS=0V Min Typ Max Unit 30 V 1 μA www.goodark.com Page 1 of 6 Rev.2.0 SSF3620 30V Dual N-Channel MOSFET Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Thresho...