MOSFET
SSF4414
DESCRIPTION
The SSF4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This ...
Description
SSF4414
DESCRIPTION
The SSF4414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID = 8.5A RDS(ON) < 40mΩ @ VGS=4.5V RDS(ON) < 26mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
●PWM applications ●Load switch ●Power management
D
G
S Schematic diagram
D DD D 8 7 65
4414
1 2 34 S SSG
Marking and pin Assignment
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4414
SSF4414
SOP-8
Ø330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30 ±20 8.5 50
3 -55 To 150
40
Unit
V V A A W ℃
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=24V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
ON CHARACTERISTICS (Note 3)
Min Typ Max
30 1
±100
Unit
V μA nA
©Silikron Semiconductor CO.,LTD.
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