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SSF4N60F Dataheets PDF



Part Number SSF4N60F
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description MOSFET
Datasheet SSF4N60F DatasheetSSF4N60F Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 600V 1.9Ω(typ.) ID 4A Features and Benefits: TO-220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF4N60F Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the o.

  SSF4N60F   SSF4N60F


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Main Product Characteristics: VDSS RDS(on) 600V 1.9Ω(typ.) ID 4A Features and Benefits: TO-220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF4N60F Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=27.5mH Avalanche Current @ L=27.5mH Operating Junction and Storage Temperature Range Max. 4 2.5 16 33 0.26 600 ± 30 220 4 -55 to + 150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.03.21 www.silikron.com Version : 1.1 page 1 of 8 SSF4N60F Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 3.79 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 600 — — 2 — — — — — — — — — — — — — — — Typ. — 1.9 4.63 — 2.28 — — — — 17.8 3.7 7.1 10.9 16.3 40.0 31.8 537 59 6 Max. — 2.1 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω V μA nA nC ns pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 2A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 4A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, RL=75Ω, RGEN=25Ω ID=4A VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 4 — — 16 — 0.87 1.3 — 311.6 — — 2476 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=4A, VGS=0V TJ = 25°C, IF =4A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.03.21 www.silikron.com Version : 1.1 page 2 of 8 Test circuits and Waveforms SSF4N60F Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.03.21 www.silikron.com Version : 1.1 page 3 of 8 Typical electrical and thermal characteristics SSF4N60F Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.03.21 www.silikron.com Version : 1.1 page 4 of 8 Typical electrical and thermal characteristics SSF4N60F Figure 5. Maximum Drain Current Vs. Case Temperature Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2013.03.21 www.silikron.com Version : 1.1 page 5 of 8 Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION_GN SSF4N60F Symbol E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1 Q2 b1 b2 b3 Dimension In Millimeters Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600 15.780 8.970 6.500 Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800 15.980 9.370 6.800 3.080 3.180 3.280 1.400 1.500 1.600 0.900 1.000 1.100 0.100 0.200 0.300 12.780 2.970 0.830 3o 43o 1.180 0.760 - 12.980 3.170 0.930 5o 45o 1.280 0.800 - 13.180 3.370 1.030 7o 47o 1.380 0.840 1.420 Dimension In Inches Min 0.392 0.387 0.268 0.181 0.096 0.105 0.024 0.621 0.353 0.256 Nom 0.400 0.395 0.276 0.185 0.100 0.109 0.028 0.020 0.625 0.361 0.264 0.10BSC .


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