Document
Main Product Characteristics:
VDSS RDS(on)
600V 1.9Ω(typ.)
ID 4A
Features and Benefits:
TO-220F
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF4N60F
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=27.5mH Avalanche Current @ L=27.5mH Operating Junction and Storage Temperature Range
Max. 4 2.5 16 33
0.26 600 ± 30 220
4 -55 to + 150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.03.21 www.silikron.com
Version : 1.1
page 1 of 8
SSF4N60F
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 3.79 62 40
Units ℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
600 — —
2 — — — — — — — — — — — — — — —
Typ. — 1.9 4.63 — 2.28 — — — — 17.8 3.7 7.1 10.9 16.3 40.0 31.8 537 59 6
Max. — 2.1 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω V μA nA nC
ns
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 2A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 4A, VDS=480V, VGS = 10V
VGS=10V, VDS=300V, RL=75Ω, RGEN=25Ω ID=4A
VGS = 0V VDS = 25V ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 4
— — 16
— 0.87 1.3 — 311.6 — — 2476 —
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=4A, VGS=0V TJ = 25°C, IF =4A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.03.21 www.silikron.com
Version : 1.1
page 2 of 8
Test circuits and Waveforms
SSF4N60F
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.03.21 www.silikron.com
Version : 1.1
page 3 of 8
Typical electrical and thermal characteristics
SSF4N60F
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.03.21 www.silikron.com
Version : 1.1
page 4 of 8
Typical electrical and thermal characteristics
SSF4N60F
Figure 5. Maximum Drain Current Vs. Case Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.03.21 www.silikron.com
Version : 1.1
page 5 of 8
Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION_GN
SSF4N60F
Symbol
E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1
Q2 b1 b2 b3
Dimension In Millimeters
Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600
15.780 8.970 6.500
Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC
Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800
15.980 9.370 6.800
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780 2.970 0.830
3o 43o 1.180 0.760
-
12.980 3.170 0.930
5o 45o 1.280 0.800
-
13.180 3.370 1.030
7o 47o 1.380 0.840 1.420
Dimension In Inches
Min 0.392 0.387 0.268 0.181 0.096 0.105 0.024
0.621 0.353 0.256
Nom 0.400 0.395 0.276 0.185 0.100 0.109 0.028 0.020 0.625 0.361 0.264 0.10BSC
.