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SSF5508D Dataheets PDF



Part Number SSF5508D
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF5508D DatasheetSSF5508D Datasheet (PDF)

Main Product Characteristics SSF5508D Preliminary VDSS RDS(on) 60V(Typ) 3.8mohm(Typ) ID 110A Features and Benefits SSF5508D Top View (DPAK)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  150℃ operating temperature  High Avalanche capability and 100% tested  Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with hig.

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Main Product Characteristics SSF5508D Preliminary VDSS RDS(on) 60V(Typ) 3.8mohm(Typ) ID 110A Features and Benefits SSF5508D Top View (DPAK)  Advanced trench MOSFET process technology  Special designed for convertors and power controls  Ultra low on-resistance  150℃ operating temperature  High Avalanche capability and 100% tested  Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① ID @ TC = 100°C IDM ISM Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current.(Body Diode) Power Dissipation③ PD @TC = 25°C Linear derating factor .


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