Document
Main Product Characteristics
SSF5508D
Preliminary
VDSS RDS(on)
60V(Typ) 3.8mohm(Typ)
ID 110A
Features and Benefits
SSF5508D Top View (DPAK)
Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 150℃ operating temperature High Avalanche capability and 100% tested Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C IDM ISM
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current② Pulsed Source Current.(Body Diode)
Power Dissipation③
PD @TC = 25°C Linear derating factor
.