Document
SSF5510G
Preliminary
FEATURES Advanced trench process technology Ultra low Rdson, typical 8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
ID =56A BV=55V R DS (ON) =8mohm (typ.)
DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house.
APPLICATIONS Power switching application
SSF5510G Top View
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ①
Power dissipation PD@TC=25ْC
Linear derating factor
VGS Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
EAS EAR TJ TSTG
Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction a.