Document
Main Product Characteristics
VDSS RDS(on)
ID
650V 1.0Ω (typ.)
5A ①
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
TO-251
SSF5NS65G
650V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
The SSF5NS65G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAR TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4mH Operating Junction and Storage Temperature Range
Max. 5① 3.1① 15 50 0.4 650 ± 30 54 2.2 -55 to +150
Units
A
W W/°C
V V mJ A °C
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Page 1 of 7
Rev.1.0
SSF5NS65G
650V N-Channel MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 2.5 75
Units ℃/W ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min. 650 — — 2 — — — — — — — — — — — — — — —
Typ. — 1.0 2.2 — 2.7 — — — — 8.3 2.3 2.6 9.9
18.4 18.1 15.3 267 220 4.76
Max. — 1.2 — 4 — 1 50 100 -100 — — — — — — — — — —
Units V Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 4A, VDS=100V, VGS = 10V
VGS=10V, VDS =380V, ns
RGEN=18Ω,ID =4.5A
VGS = 0V pF VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 5①
— — 15
— 0.85 1.2 — 284 — — 1395 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = IS, di/dt = 100A/μs
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Page 2 of 7
Rev.1.0
Test Circuits and Waveforms
SSF5NS65G
650V N-Channel MOSFET
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation .