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SSF5NS65G Dataheets PDF



Part Number SSF5NS65G
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF5NS65G DatasheetSSF5NS65G Datasheet (PDF)

Main Product Characteristics VDSS RDS(on) ID 650V 1.0Ω (typ.) 5A ① Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-251 SSF5NS65G 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF5NS65G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves .

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Main Product Characteristics VDSS RDS(on) ID 650V 1.0Ω (typ.) 5A ① Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-251 SSF5NS65G 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF5NS65G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4mH Operating Junction and Storage Temperature Range Max. 5① 3.1① 15 50 0.4 650 ± 30 54 2.2 -55 to +150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.0 SSF5NS65G 650V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 2.5 75 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 650 — — 2 — — — — — — — — — — — — — — — Typ. — 1.0 2.2 — 2.7 — — — — 8.3 2.3 2.6 9.9 18.4 18.1 15.3 267 220 4.76 Max. — 1.2 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 1A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 4A, VDS=100V, VGS = 10V VGS=10V, VDS =380V, ns RGEN=18Ω,ID =4.5A VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 5① — — 15 — 0.85 1.2 — 284 — — 1395 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=2.8A, VGS=0V TJ = 25°C, IF = IS, di/dt = 100A/μs www.goodark.com Page 2 of 7 Rev.1.0 Test Circuits and Waveforms SSF5NS65G 650V N-Channel MOSFET Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation .


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