N-Channel MOSFET
Main Product Characteristics
VDSS
60V
RDS(on) 8.3mΩ (typ.)
ID 64A ①
Features and Benefits
TO-251
Advanced MOSFE...
Description
Main Product Characteristics
VDSS
60V
RDS(on) 8.3mΩ (typ.)
ID 64A ①
Features and Benefits
TO-251
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product
SSF6010G
60V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAs TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 64 ① 45 ① 300
91 0.61 60 ±20 160 32.6 -55 to +175
Units
A
W W/°C
V V mJ A °C
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Rev.1.1
SSF6010G
60V N-Channel MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 1.64 110
Units ℃/W ℃/W
Electrical Characteristics...
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